to-92 plastic-encapsulate transistors MPS2907A transistor (pnp) features complementary npn type available (mps2222a) maximum ratings (t a =25 unless otherwise noted) symbol par d p h w h u value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -10 n a collector cut-off current i cex v ce =-30v,v eb(off) =-0.5v -50 na emitter cut-off current i ebo v eb =-3v,i c =0 -10 na h fe(1) v ce =-10v,i c =-0.1ma 78 h fe(2) v ce =-10v,i c =-150ma 100 300 dc current gain h fe(3) v ce =-10v,i c =-500ma 52 v ce(sat) i c =-150ma,i b =-15ma -0.4 v collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.67 v v be(sat) i c =-150ma,i b =-15ma -1 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -1.2 v transition frequency f t v ce =-20v,i c =-50ma,f=100mhz 200 mhz delay time t d 10 n s rise time t r i b1 = - i b2 =-15ma v cc =-30v,ic=-150ma, 25 n s storage time t s 225 n s fall time t f v cc =-6v,ic=-150ma, i b1 = - i b2 =-15ma 60 n s classific a tion of h fe(2) ra n k l h ra n ge 100-200 200-300 to-92 1. emitter 2. base 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jul,2012
-10 -100 0 100 200 300 400 500 -0.1 -1 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -100 -0.1 -1 -10 1 10 100 -1 -10 -100 -0.01 -0.1 -1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -10 -20 -30 -40 -50 -0 -40 -80 -120 -160 -200 common emitter v ce =-20v t a =25 h fe ?? f t ?? -4 transition frequency f t (mhz) collector current i c (ma) common emitter v ce =-10v MPS2907A i c -600 i c t a =25 t a =100 dc current gain h fe collector current i c (ma) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) common emitter v ce =-10v -600 t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) f=1mhz i e =0/i c =0 t a =25 -20 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) v be i c ?? -600 =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (ma) -600 =10 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) common emitter t a =25 -1ma -900ua -800ua -700ua -600ua -500ua -400ua -300ua -200ua i b =-100ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jul,2012
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